System and method for gas flow verification

ABSTRACT

A gas flow rate verification apparatus is provided for shared use in a multiple tool semiconductor processing platform. The gas flow rate verification apparatus is defined to measure a pressure rate of rise and temperature within a test volume for determination of a corresponding gas flow rate. The apparatus includes first and second volumes, wherein the second volume is larger than the first volume. The apparatus also includes first and second pressure measurement devices, wherein the second pressure measurement device is capable of measuring higher pressures. Based on the target gas flow rate to be measured, either the first or second volume can be selected as the test volume, and either the first or second pressure measurement device can be selected to measure the pressure in the test volume. Configurability of the apparatus enables accurate measurement of gas flow rates over a broad range and in an time efficient manner.

CLAIM OF PRIORITY

This application is a divisional application of U.S. patent applicationSer. No. 11/083,761, filed on Mar. 16, 2005 now U.S. Pat. No. 7,376,520,the disclosure of which is incorporated in its entirety herein byreference.

BACKGROUND OF THE INVENTION

A number of modern semiconductor wafer fabrication processes require aprocess gas to be supplied in a carefully controlled manner to areaction chamber, wherein the process gas is used to support or effectprocessing of the semiconductor wafer. For example, in a plasma etchprocess, a process gas is supplied to an etching chamber, wherein theprocess gas is converted to a plasma for etching materials present onthe surface of the wafer. In most cases, the semiconductor waferfabrication processes require the process gas supply to be carefullycontrolled. More specifically, a flow rate of the process gas to thereaction chamber needs to be maintained within a range defined by arecipe of the fabrication process. The process gas flow rate is commonlycontrolled by a mass flow controller (MFC) upstream from the reactionchamber. Thus, the accuracy at which the process gas flow rate can becontrolled is generally dictated by the accuracy of the MFC throughwhich the process gas is required to pass.

It should be appreciated that the MFC device is a complex and sensitiveinstrument having a real-world gas flow rate control accuracy that isdependent upon many factors. During manufacture of the MFC device, thegas flow rate control provided by the MFC is verified to be withinestablished MFC design specification tolerances. The MFC verificationduring manufacture is typically performed in a controlled laboratoryenvironment using N₂ gas. Thus, the MFC verification during manufacturemay not bound the environmental conditions to which the MFC will beexposed during a real-world implementation. Additionally, conversionfactors are used to translate the MFC verification results using N₂ intocorresponding verification results representing a real gas. It should beappreciated that these conversion factors have an inherent level ofuncertainty. Furthermore, after the MFC device is shipped to theend-user and installed in the end-user's system, a potential exists forthe MFC device to be out of tolerance with respect to its designspecification. Also, the gas flow rate control capability of the MFCdevice needs to be periodically verified to ensure that an out oftolerance condition has not be introduced in the form of calibrationdrift, zero drift, or gas-calibration error that may occur duringstartup or service of the MFC device.

In view of the foregoing, it is desirable to verify the gas flow ratecontrol capability of the MFC device in the real-world implementationusing real gases. However, the end-user's equipment for verifying thegas flow rate control accuracy of the MFC device is typically notcapable of matching the tight tolerance levels of the MFC designspecification. Therefore, a need exists for improvements in technologyrelated to accurate verification of the gas flow rate control capabilityof the MFC device under anticipated operating conditions.

SUMMARY OF THE INVENTION

It should be appreciated that the present invention can be implementedin numerous ways, such as a process, an apparatus, a system, a device ora method. Several inventive embodiments of the present invention aredescribed below.

In one embodiment, a gas flow rate verification apparatus is disclosed.The apparatus includes a first volume defined within a first chamber anda second volume defined within a second chamber. The second volume islarger than the first volume. The apparatus further includes a firstpressure measurement device and a second pressure measurement device.Each of the first and second pressure measurement devices is configuredto be connected in fluid communication with either the first volume, thesecond volume, or both the first and second volumes. The second pressuremeasurement device is capable of measuring higher pressures than thefirst pressure measurement device. The apparatus is further defined suchthat each of the first volume, the second volume, or both the first andsecond volumes is selectable as a test volume for measuring a gas flowrate. Additionally, each of the first pressure measurement device or thesecond pressure measurement device is selectable for measuring apressure within the test volume.

In another embodiment, a central cluster tool platform for semiconductorprocessing is disclosed. The tool platform includes a plurality of waferprocessing modules accessible from a central location. The tool platformalso includes a plurality of gas supply control systems, wherein each ofthe plurality of gas supply control systems is associated with arespective one of the wafer processing modules. The tool platformfurther includes a gas flow rate verification device disposed in acentral location relative to the plurality of wafer processing modules.The gas flow rate verification device is defined to be selectivelyconnected in fluid communication with each of the plurality of gassupply control systems. The gas flow rate verification device is definedto measure a gas flow rate supplied by the gas supply control system towhich the gas flow rate verification device is selectively connected.

In another embodiment, a method for operating a gas flow rateverification device is disclosed. The method includes identifying atarget gas flow rate range. A test volume within the gas flow rateverification device is then selected based on the identified target gasflow rate rage. The selected test volume is either a small volume or alarge volume. A pressure measurement device within the gas flow rateverification device is also selected based on the identified target gasflow rate range. The selected pressure measurement device is either alower pressure measurement device or a higher pressure measurementdevice. The selected test volume is then evacuated. The method thenproceeds with exposing the test volume to a gas flow rate to bemeasured. A pressure rate of rise within the test volume is thenmeasured. Additionally, a temperature within the test volume ismeasured. Using the measured pressure rate of rise and temperaturewithin the test volume, the gas flow rate into the test volume isdetermined.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an illustration showing a top view of a central cluster toolplatform including multiple process modules, in accordance with oneembodiment of the present invention;

FIG. 1B is an illustration showing a side view of the process modules,in accordance with one embodiment of the present invention;

FIG. 2 is an illustration showing a simplified schematic of the gas box,in accordance with one embodiment of the present invention;

FIG. 3 is an illustration showing the tool platform of FIG. 1A having adedicated pressure rate of rise gas flow rate measurement apparatusimplemented therein, in accordance with one embodiment of the presentinvention;

FIG. 4 is an illustration showing a schematic of the flow verifierdevice implementation in the tool platform, in accordance with oneembodiment of the present invention;

FIG. 5 is an illustration showing a schematic of the flow verifierdevice, in accordance with one embodiment of the present invention; and

FIG. 6 is an illustration showing a flowchart of a method for operatingthe flow verifier device, in accordance with one embodiment of thepresent invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

FIG. 1A is an illustration showing a top view of a central cluster toolplatform (“tool platform”) 100 including multiple process modules 103a-103 d, in accordance with one embodiment of the present invention. Thetool platform 100 includes a central area 101 from which an access 105a-105 d of each process module 103 a-103 d is accessible. A wafertransfer mechanism 107 is disposed within the central area 101, suchthat a wafer can be transferred to or from each process module 103 a-103d. In one embodiment, the transfer mechanism 107 is defined as a roboticmanipulation device. Though the exemplary tool platform 100 of FIG. 1Ashows four process modules 103 a-103 d, it should be appreciated thatother embodiments of the tool platform 100 can include more or lessprocess modules. Furthermore, it should be appreciated that each processmodule 103 a-103 d can be defined to perform one or more waferprocessing operations, as known to those skilled in the art.

FIG. 1B is an illustration showing a side view of the process modules103 a-103 d, in accordance with one embodiment of the present invention.Each process module 103 a-103 d is defined to include a processingchamber 111 a-111 d. The access 105 a-105 d of each processing chamber111 a-111 d provides for transfer of the wafer into and out of theprocessing chamber 111 a-111 d, while enabling the process chamber 111a-111 d to be sealed during operation. In one embodiment, the access 105a-105 d is defined as a slit-valve. Each process module 103 a-103 d isfurther equipped with a gas box 109 a-109 d disposed above theprocessing chamber 111 a-111 d. The gas box 109 a-109 d is defined tosupply a required process gas to the process chamber 111 a-111 d at anappropriate gas flow rate. Each process module 103 a-103 d furtherincludes a region 113 a-113 d for other equipment below the processchamber 111 a-111 d. The other equipment includes various types ofequipment necessary for operation of the processing chamber 111 a-111 d,such as power supplies, electrical equipment, control equipment, etc. Itshould be appreciated that each process module 103 a-103 d represents avery complex system including numerous interrelated components. In orderto avoid unnecessarily obscuring the present invention, details of theprocessing chamber 111 a-111 d and other equipment 113 a-113 d are notfurther described herein.

FIG. 2 is an illustration showing a simplified schematic of the gas box109 a-109 d, in accordance with one embodiment of the present invention.As previously mentioned, the gas box 109 a-109 d is used to command anappropriate gas mixture in the process chamber 111 a-111 d at anappropriate gas flow rate. The gas box 109 a-109 d includes a number ofgas sticks 201 a-210 p. In the embodiment of FIG. 2, the gas box 109a-109 d includes sixteen gas sticks 201 a-201 p. However, it should beappreciated that a different number of gas sticks can be used indifferent embodiments. Each gas stick 201 a-201 p can be used to providea particular gas or gas mixture to the processing chamber 111 a-111 d ata controlled flow rate. For example, FIG. 2 shows an input to each gasstick 201 a-201 p being connected to receive Gas 1 through Gas 16,respectively. The outputs of each gas stick 201 a-201 p are connected toa common manifold 217. The manifold 217 is plumbed to the processingchamber 111 a-111 d through an isolation valve 219.

Each gas stick 201 a-201 p includes a manual valve 203 a-203 p, a gasregulator 205 a-205 p, a pressure measurement device 207 a-207 p, afilter 209 a-209 p, control valves 211 a-211 p and 215 a-215 p, and amass flow controller (MFC) 213 a-213 b. It should be appreciated that invarious embodiments each gas stick 201 a-201 b can be defined withoutsome of the above-mentioned components or with additional components.During operation the various gas sticks 201 a-201 p are controlled toprovide a specifically formulated gas supply to the processing chamber111 a-111 d at a specific flow rate. An accuracy of the gas flow rateexiting each gas stick 201 a-201 p and subsequently entering theprocessing chamber 111 a-111 b is dictated by the accuracy of the MFCs213 a-213 p. Therefore, it is important that each MFC 213 a-213 p becapable of controlling its respective gas flow rate within an allowabletolerance range. In order to ensure that the gas flow rate into theprocessing chamber 111 a-111 d is acceptable, it is necessary to verifythe calibration of each MFC 213 a-213 p.

In one embodiment, calibration of each MFC 213 a-213 b can be performedusing a pressure rate of rise method (“RoR method” hereafter). In theRoR method, a gas flow rate is determined by measuring a rate ofpressure rise and temperature within a chamber of known volume, as thegas is directed into the chamber. Using Equation 1 below, the measuredgas flow rate is determined.

Equation 1:

${{{Flow}\mspace{14mu}{{Rate}({sccm})}} = \frac{\left( {{Volume}\left( {cm}^{3} \right)} \right)\left( {{Pressure}\mspace{14mu}{RoR}\mspace{11mu}\left( \frac{mT}{\sec} \right)} \right){C\left( \frac{\left( \sec \right)(K)}{({mT})\left( \min \right)} \right)}}{273.16 + {{Temp}.\mspace{11mu}\left( {C.} \right)}}},$

wherein C represents a constant conversion factor and RoR means rate ofrise.

The measured gas flow rate is compared to a gas flow setpoint of the MFCto verify that the MFC is operating within its flow tolerance. Ingeneral, the MFC 213 a-213 p for each gas stick 201 a-201 p iscalibrated separately. Additionally, it is preferable to perform atleast a ten point gas calibration for each MFC 213 a-213 p. The tenpoint gas calibration includes verification of ten gas flow setpointsequally spaced over the operating range of the MFC 213 a-213 p,beginning with the minimum gas flow rate and ending with the maximum gasflow rate. In the embodiment of FIG. 2, ten gas flow calibration pointsfor each of the sixteen gas sticks 201 a-201 p requires performance of160 gas calibration measurements. Thus, it is important that each gascalibration measurement be performed in a reasonably short period oftime.

Conventionally, the process chamber 111 a-111 d has been used to performthe gas flow rate measurements for calibrating the MFCs 213 a-213 p. Itis necessary to evacuate the process chamber 111 a-111 d prior tostarting the gas flow rate measurement in the process chamber 111 a-111d. Consequently, because of the large volume of the process chamber 111a-111 d, it can take a long time to evacuate the process chamber 111a-111 d and observe a sufficient gas pressure increase within theprocess chamber 111 a-111 d to measure the gas flow rate. For example,it can take up to five minutes to perform a single gas flow ratemeasurement using the process chamber 111 a-111 d. Thus, performing afull gas calibration, e.g., a ten point calibration of each gas stick201 a-201 p, can take a substantial amount of time, during which theprocess chamber 111 a-111 d cannot be used for wafer fabricationprocesses. Thus, use of the process chamber 111 a-111 d to perform gasflow rate calibration measurements can adversely affect systemavailability.

In addition to the foregoing, the large volume of the process chamber111 a-111 d and the numerous structures present therein cause theprocess chamber 111 a-111 d to have a large and non-uniform thermalmass. The thermal mass characteristics of the processing chamber 111a-111 d introduce problems with respect to obtaining and maintaining auniform temperature distribution within the processing chamber 111 a-111d during gas flow rate calibration measurements. Additionally,temperature feedback mechanisms commonly associated with the processingchamber 111 a-111 d are usually not effective enough to control thetemperature within the processing chamber 111 a-111 d.

To avoid the non-uniform temperature distribution problems associatedwith the processing chamber 111 a-111 d, the gas flow rate measurementscan be performed with the chamber at room temperature. However, it cantake a substantial amount of time, e.g., one-half day or longer, for theprocessing chamber 111 a-111 d to cool down from normal operatingtemperatures to room temperature. Therefore, having to allow the processchamber 111 a-111 d to reach thermal equilibrium at room temperature canadversely affect wafer fabrication throughput.

In summary, using the process chamber 111 a-111 d to perform gas flowrate calibration measurements is not considered ideal because the largevolume of the process chamber 111 a-111 d introduces difficulty incontrolling temperatures. Additionally, using the process chamber 111a-111 d to perform a multiple point gas flow rate calibration takes toolong and requires too much process chamber 111 a-111 d downtime.Additionally, characteristics of the process chamber 111 a-111 d, suchas volume determination and temperature control, do not allow for gasflow rate measurements that are sufficiently accurate to verify therequired MFC 213 a-213 p performance specifications.

To resolve the problems mentioned above, the present invention providesa gas flow rate verification apparatus capable of servicing multiple gasboxes 109 a-109 d within the tool platform 100. FIG. 3 is anillustration showing the tool platform 100 of FIG. 1A having a dedicatedgas flow rate verification apparatus 300 implemented therein, inaccordance with one embodiment of the present invention. For ease ofdiscussion, the gas flow rate verification apparatus 300 of the presentinvention is referred to as the flow verifier device 300 in theremainder of this description. It should be appreciated that the flowverifier device 300 is implemented in the tool platform 100 to provideaccurate and repeatable gas flow rate measurements for verifyingcalibration of the MFCs 213 a-213 p in each gas box 109 a-109 d of eachprocess module 103 a-103 d. As will be discussed in detail below, theflow verifier device 300 includes accurately known chamber volumes,pressure sensing devices, and temperature sensing devices that areseparate from the process chambers 111 a-111 d of each process module103 a-103 d.

The flow verifier device 300 is centrally located in the tool system100. Each gas box 109 a-109 d is connected to the flow verifier device300 by a single line extending from the output manifold 217 of each gasbox 109 a-109 d to the flow verifier device 300. The flow verifierdevice 300 can be utilized by any process module 103 a-103 d installedon the tool system 100. However, only one process module 103 a-103 dshould use the flow verifier device 300 at any given time to perform gasflow rate measurements.

FIG. 4 is an illustration showing a schematic of the flow verifierdevice 300 implementation in the tool platform 100, in accordance withone embodiment of the present invention. As previously discussed withrespect to FIGS. 1B and 2, the tool platform 100 includes the gas boxes109 a-109 d, wherein each gas box 109 a-109 d includes a respective setof gas sticks 201 a-201 p. Each gas stick 201 a-201 p functions toreceive an input gas/gas mixture and provide the gas/gas mixture to theoutput manifold 217 at a controlled flow rate corresponding to a settingof the MFC 213 a-213 p of the gas stick 201 a-201 p. As previouslymentioned with respect to FIG. 2, the output manifold 217 of each gasbox 109 a-109 d is plumbed to the processing chamber 111 a-111 d withinthe common process module 103 a-103 d. Fluid communication between theoutput manifold 217 and the processing chamber 111 a-111 d can becontrolled by isolation valves 219.

The centralized flow verifier device 300 is plumbed to the outputmanifold 217 of each gas box 109 a-109 d. In one embodiment, a singleline is used to establish fluid communication between each outputmanifold 217 and the flow verifier device 300. An isolation valve 401a-401 d is provided near each output manifold 217 within the respectiveline extending between the output manifold 217 and the flow verifierdevice 300. The isolation valves 401 a-401 d serve to isolate the outputmanifolds 217 during operation of the processing chambers 111 a-111 d.Additionally, the position of the isolation valves 401 a-401 d near theoutput manifolds 217 serves to limit the plumbing volume between theoutput manifolds 217 and the processing chambers 111 a-111 d duringoperation of the processing chambers 111 a-111 d. In one embodiment,each line entering the flow verifier device 300 from the gas boxes 109a-109 d also includes an isolation valve 403 a-403 d positioned near theentry of the flow verifier device 300. The position of the isolationvalves 403 a-403 d near the flow verifier device 300 serves to limit theplumbing volume between the flow verifier device 300 and the gas boxes109 a-109 d that do not currently have access to the flow verifierdevice 300. Additionally, the flow verifier device 300 is connected influid communication with a pump 405, which provides a vacuum source forevacuating and purging the flow verifier device 300.

With reference to Equation 1 above, the volume used to determine the gasflow rate being provided by a particular MFC 213 a-213 d includes allfluidly connected plumbing volumes from the output of the particular MFC213 a-213 p through the flow verifier device 300. Therefore, it isimportant that the plumbing between each gas box 109 a-109 d and theflow verifier device 300, as well as within each gas box 109 a-109 d andthe flow verifier device 300, be well-defined and understood. Thecentralized placement of the flow verifier device 300 within the toolplatform 100, with known tubing volumes between each gas box 109 a-109 dand the flow verifier device 300, allows for an accurate volumedetermination when using the flow verifier device 300 to perform gasflow rate measurements. Furthermore, the plumbing between each gas box109 a-109 d and the flow verifier device 300, as well as within the flowverifier device 300, is configured to accommodate anticipated gas flowrates to be measured and the desired gas flow rate measurement timingcharacteristics.

FIG. 5 is an illustration showing a schematic of the flow verifierdevice 300, in accordance with one embodiment of the present invention.The flow verifier device 300 includes an input manifold 501 to which anoutput of each isolation valve 403 a-403 d is connected. The inputmanifold 501 is connected to a first chamber 511 through an isolationvalve 503 and an input line 507. The input manifold 501 is alsoconnected to a second chamber 513 through an isolation valve 505 and aninput line 509. The first chamber 511 is connected to an output line515. The second chamber 513 is connected to an output line 517. Theoutput line 515 of the first chamber 511 is connected to a dischargevalve 535, which is in turn connected to a discharge line 539.Similarly, the output line 517 of the second chamber 513 is connected toa discharge valve 537, which is in turn connected to a discharge line545. Both discharge lines 539 and 545 are connected to the pump 405, aspreviously discussed with respect to FIG. 4.

The flow verifier device 300 further includes a first bridge line 519connected between the output line 515 of the first chamber 511 and theoutput line 517 of the second chamber 513. The first bridge line 519 isseparated from the output lines 515 and 517 by valves 521 and 523,respectively. A first pressure measurement device 525 is connected tothe first bridge line 519.

In a manner similar to the first bridge line 519, the flow verifierdevice 300 includes a second bridge line 527 connected between theoutput line 515 of the first chamber 511 and the output line 517 of thesecond chamber 513. The second bridge line 527 is separated from theoutput lines 515 and 517 by valves 529 and 531, respectively. A secondpressure measurement device 533 is connected to the second bridge line527.

The flow verifier device 300 is further defined to include a heater 541for maintaining an elevated temperature in each of the first chamber 511and the second chamber 513. Additionally, one or more temperaturemeasurement devices 543 are provided for measuring a temperature withineach of the first chamber 511 and the second chamber 513. In oneembodiment, the flow verifier device 300 is connected to a controlsystem 547 that is defined to control actuation of each valve in theflow verifier device 300, control the heater 541, and provide for dataacquisition from the temperature and pressure measurements devices 543,525, and 533.

Internal to each of the first chamber 511 and the second chamber 513 isa first volume and a second volume, respectively. In one embodiment, thesecond volume is defined to be larger than the first volume by at leasta factor of ten. For example, in one embodiment the small volume isdefined as approximately one liter within the first chamber 511, and thelarge volume is defined as approximately 10 liters within the secondchamber 513. It should be appreciated that in other embodiments theratio of the second volume to the first volume can be less than orgreater than ten. However, the ratio of the second volume to the firstvolume should be established such that gas flow rates can be accuratelymeasured over an anticipated operating range of gas flow rates andwithin time constraints established for the gas flow rate measurements.

In one embodiment, the second pressure measurement device 533 is definedto measure a pressure at least one hundred times greater than themaximum pressure measurable by the first pressure measurement device525. In one embodiment, the first and second pressure measurementdevices 525/533 are implemented as a first and second manometer, whereinthe first manometer is capable of measuring pressures up to 1 torr andthe second manometer is capable of measuring pressures up to 100 torr.It should be appreciated that in other embodiments the maximum pressuremeasurable by the second pressure measurement device 533 can be more orless than one hundred times the maximum pressure measurable by the firstpressure measurement device 525. However, the maximum measurablepressures of the first and second pressure measurement devices 525/533should be established such that gas flow rates can be accuratelymeasured over an anticipated operating range of gas flow rates andwithin time constraints established for the gas flow rate measurements.

In other embodiments, more than two bridge lines can be connectedbetween the output line 515 of the first chamber 511 and the output line517 of the second chamber 513, wherein each bridge line includes arespective pressure measurement device. It should be appreciated that inembodiments where multiple bridge lines are implemented, the pressuremeasurement devices associated with the bridge lines can be defined toprovide a more refined pressure measurement capability in terms ofoverall pressure range and sensitivity.

In one embodiment, the first chamber 511 and the second chamber 513 aremachined out of a solid aluminum block. Use of aluminum in thisembodiment provides for good thermal uniformity within the chambers whenheated. In this embodiment each of the first chamber and the secondchamber 513 is defined to be sealed by a respective cover and o-ring.Use of removable covers allows the first and second chambers 511/513 tobe more easily serviced and cleaned. Also, tubing penetrations into thefirst and second chambers 511/513 can be sealed through use of o-ringsas opposed to welding. A leak rate introduced by the use of o-ring sealscan be accounted for in the gas flow rate measurements performed usingthe flow verifier device 300. In alternative embodiments, the first andsecond chambers 511/513 can be made from materials other than aluminum,e.g., stainless steel. Additionally, in other embodiments, closuremechanisms other than o-rings can be utilized.

The two chambers 511/513 and two pressure measurement devices 525/533provide the flow verifier device 300 with the capability to measure gasflow rates accurately and repeatably over a wide range of flow rates,e.g., 0.5 sccm to 5000 sccm, wherein sccm refers to standard cubiccentimeter(s) per minute. More specifically, the flow verifier device300 provides for selection of either the first volume, i.e., firstchamber 511, the second volume, i.e., the second chamber 513, or boththe first and second volumes as a test volume within which the gas flowrate measurement is to be performed. Additionally, the flow verifierdevice 300 provides for selection of either the first or second pressuremeasurement device 525/533 for use in performing the gas flow ratemeasurement. It should be appreciated that selection of the test volumeand selection of the pressure measurement device to be used during themeasurement is afforded by the various isolation valves 503, 505, 521,523, 529, and 531 implemented within the flow verifier device 300.

In view of the configurable nature of the flow verifier device 300,accurate resolution of gas flow rate measurements is based upon anappropriate selection of test volume and pressure measurement device.Selection of the appropriate test volume and pressure measurement devicefor use in a given gas flow rate measurement is based on the anticipatedgas flow rate to be measured and the expected rate of pressure rise inthe test volume. In one embodiment, four gas flow rate ranges aredefined to enable selection of the appropriate test volume and pressuremeasurement device: 0.5 sccm to 5 sccm, 5 sccm to 50 sccm, 50 sccm to500 sccm, and 500 sccm to 5000 sccm. It should be appreciated that theboundary values of each of these four gas flow rate ranges areapproximate to within ±10%. Additionally, when an anticipated gas flowrate to be measured falls within an overlap of any two gas flow rateranges, either of the two overlapping gas flow rate ranges can be usedto select the test volume and the pressure measurement device. Table 1below shows the test volume and pressure measurement device to beselected based on the anticipated gas flow rate range, in accordancewith one embodiment of the present invention. With respect to Table 1,the terms “small” and “large” for the test volume refer to the firstchamber 511 and second chamber 513, respectively. Further with respectto Table 1, the terms “small” and “large” for the pressure measurementdevice refer to the first pressure measurement device 525 and secondpressure measurement device 533, respectively.

TABLE 1 Selection of Test Volume and Pressure Measurement DevicePressure Anticipated Gas Test Measurement Flow Rate Range Volume Device 0.5 sccm to 5 sccm small small  5 sccm to 50 sccm large small  50 sccmto 500 sccm small large 500 sccm to 5000 sccm large large

During the gas flow rate measurement using the flow verifier device 300,a timer and the selected pressure measurement device is used to measurethe rate of pressure rise within the test volume. Additionally, thetemperature within the test volume is measured. Then, using Equation 1as presented above, the measured gas flow rate is determined. The volumeto be used in Equation 1 is defined as the entire volume that is influid communication downstream from the output of the MFC that is beingverified. Once the gas flow rate is determined using Equation 1, acorrected gas flow rate can be determined by subtracting a measured leakrate of the flow verifier device 300, if any, from the measured gas flowrate.

In one embodiment, the leak rate of the flow verifier device 300 can bedetermined by measuring a rate of pressure rise within an evacuatedchamber due to gas leakage from the test volume of the flow verifierdevice 300. Then, using Equation 1 above, the measured leak rate isdetermined. The volume to be used in Equation 1 when determining theleak rate of the flow verifier device 300 is defined as the volume ofthe evacuated chamber into which gas is leaking from the test volume ofthe flow verifier device 300.

The gas flow rate measured by the flow verifier device 300 can becompared to the corresponding gas setpoint on a calibration curve forthe MFC being tested to determine if the MFC is operating within itsspecified gas flow rate tolerance. If the MFC is not operating withinits specified tolerance, an evaluation can be performed to determine ifan appropriate equivalent flow rate adjustment factor is applicable,i.e. use of an offset factor, or if the MFC needs to be replaced.

During operation of the flow verifier device 300, the heater 541 is usedto maintain an elevated, i.e., above ambient, and uniform temperaturewithin the first and second chambers 511/513. The elevated temperatureenables flow rate measurements of gases that condense at lowertemperatures. Condensation of gases downstream from the MFC outlet canintroduce error in the gas flow rate measurement because volume occupiedby the condensed gas is not accounted for in the free volume parameterof Equation 1 above. Additionally, condensed gases can adversely affectpressure measurements performed using the pressure measurement devices525/533. Furthermore, gas inlets into each of the first and secondchambers 511/513 can be designed to slow the gas stream and provide alarge surface area of contact between the gas stream and heated walls ofthe gas inlets. Thus, the gas inlets can be designed to pre-heat the gasprior to entering the test volume in order to avoid condensation uponventing into the test volume.

The configurable test configuration of the flow verifier device 300provides for use of a large pressure differential during gas flow ratemeasurements, particular at the lower end of each gas flow rate range asidentified in Table 1. The configurable test configuration of the flowverifier device 300 also minimizes an amount of time required to performgas flow rate measurements, particularly at the higher end of each gasflow rate range as identified in Table 1. In one embodiment, the flowverifier device 300 enables accurate gas flow rate measurements to beperformed for each gas flow rate range as identified in Table 1 within atime period extending from about 5 seconds to about 60 seconds, whileutilizing at least 40% of the pressure range of the selected pressuremeasurement device.

As previously mentioned, the flow verifier device 300 can be connectedto the control system 547. Using a combination of digital and analogcontrol devices, the control system 547 functions to control operationof the flow verifier device 300 in accordance with user specifiedinputs. Also, the control system 547 functions to acquire data, e.g.,pressure, temperature, valve states, associated with the flow verifierdevice 300 for analysis and presentation to a user. In one embodiment, agraphical user interface (GUI) for controlling the flow verifier device300 is rendered on a display of a computer system associated with thetool platform 100. The GUI is defined to present a user with a number ofoptions for configuring the flow verifier device 300. In one embodiment,the GUI can provide an option for automated configuration of the flowverifier device 300 based upon a particular gas flow rate calibrationtest to be performed. For example, through the user interface providedby the GUI, the user can specify that a multiple point gas calibrationbe performed on one or more gas sticks within the gas box of aparticular process module. Additionally, the user can be provided withoptions for specifying a maximum and minimum flow rate to be tested foreach gas stick. It should be appreciated that any other configurableparameter associated with either the flow verifier device 300 oroperation thereof can be presented as a user-configurable item in theGUI.

The computer system associated with the tool platform 100 can also beused to perform the mathematical calculations associated with each gasflow rate measurement performed by the flow verifier device 300. Forexample, the computer system can be defined to use data acquired fromthe flow verifier device 300 to calculate the gas flow rate, calculatethe leak rate, calculate the corrected gas flow rate, and compare thecorrected gas flow rate to MFC calibration records. Furthermore, thecomputer system can be defined to correct gas flow rate measurements forother effects, such as non-ideal gas behavior as a function of pressure,temperature, and specific gas properties. The computer system and GUIcan be used to archive gas flow rate calibration results. The archivedgas flow rate calibration results can be analyzed to identifytime-dependent trends or process module-dependent trends.

FIG. 6 is an illustration showing a flowchart of a method for operatingthe flow verifier device 300, in accordance with one embodiment of thepresent invention. The method includes an operation 601 for identifyinga target gas flow rate range to be measured. An operation 603 is thenperformed to select either a small volume or a large volume for use as atest volume for measuring the gas flow rate. An operation 605 is alsoperformed to select either a lower pressure measurement device or ahigher pressure measurement device for use during the gas flow ratemeasurement. Selection of the test volume and pressure measurementdevice in operations 603 and 605 is based on the target gas flow raterange to be measured. In one embodiment, the guidelines set forth inTable 1, as previously discussed, can be used to select the test volumeand the pressure measurement device for use in testing.

The method further includes an operation 607 for evacuating the testvolume. In a subsequent operation 609, the test volume is exposed to thegas flow rate to be measured. An operation 611 is then performed tomeasure a pressure rate of rise within the test volume. In oneembodiment, the pressure rate of rise measurement in operation 611 isperformed within a time period extending from about 5 seconds to about60 seconds. Additionally, an operation 613 is performed to measure atemperature within the test volume. In one embodiment, the temperaturewithin the test volume and surrounding structure is maintained to behigher than a condensation temperature of the gas to which the testvolume is exposed. Upon completion of operations 611 and 613, anoperation 615 is provided for determining the gas flow rate into thetest volume using the measured pressure rate of rise and temperaturewithin the test volume, as previously discussed with respect to Equation1.

In one embodiment, the method can further include operations forisolating the test volume from the gas flow rate to be measured andmeasuring a gas leak rate associated with the test volume. Then, the gasflow rate determined in the operation 615 can be corrected to accountfor the measured gas leak rate.

Because the two flow verifier device 300 volumes (511/513) areaccurately known, the flow verifier device 300 can be used to perform acalibration self-check of each pressure measurement device 525/533. Forexample, the larger volume 513 can be pressurized to a known pressurewhile the small volume 511 is evacuated. Then, the isolation between thelarge and small volumes can be opened such that pressure between thelarge and small volumes is allowed to equilibrate. In this process, thepressure measurement devices 525/533 can be used to cross-check eachother to determine if they are still adequately calibrated.

Additionally, because the flow verifier device 300 volumes (511/513) arelarge relative to the external interconnecting tubing volume between thegas box 109 a-109 d and the flow verifier device 300, the flow verifierdevice 300 can be used to verify the external interconnecting tubingvolume. For example, either or both of the flow verifier device 300volumes (511/513) can be pressurized to a known pressure while theexternal volume is evacuated. Then, an isolation between the pressurizedflow verifier device 300 volume and the external volume can be openedsuch that pressure is allowed to equilibrate. Since the pressurized flowverifier device 300 volume is known and the initial and final pressuresare known, the external volume can be determined, i.e., P₁V₁=P₂V₂.

Use of two chamber volumes and two pressure measurement devices givesthe flow verifier device 300 the ability to verify gas flow ratesaccurately and repeatably over a very large gas flow rate range, e.g.,0.5 sccm to 5000 sccm. The two chamber volumes of the flow verifierdevice 300 are established such that each gas flow rate calibrationpoint over the entire gas flow rate range can be measured within a timeperiod extending from about 5 seconds to about 60 seconds. Additionally,as a shared device in the tool platform 100, the flow verifier device300 is not size sensitive. Thus, designing the flow verifier device 300to maximize gas flow rate measurement flexibility without regard to flowverifier device 300 size restrictions allows the single flow verifierdevice 300 to be suitable for measuring gas flow rates over the entiregas flow rate range. Furthermore, the flow verifier device 300 isdesigned to be cleanable and purgeable. The cleanability of the flowverifier device 300 is particularly useful when measuring flow rates oftoxic, corrosive, or condensable gases.

In addition to the aforementioned features of the flow verifier device300, the flow verifier device 300 is also capable of measuring pressureresponses to characterize MFC transient flow effects. More specifically,for a given gas flow, the pressure measurement device and test volumecan be selected in a manner that provides information about transientMFC turn-on overshoots and undershoots relative to the gas flow setpointof the MFC. Furthermore, a gas can be run through the flow verifierdevice 300 in purge mode while transient effects are monitored throughpressure changes in a given volume. The pressure changes can becorrelated to the mass flow for identifying differences in MFCs.Transient information of this type is becoming increasingly importantfor the latest semiconductor technology process control, which requiresknowledge of both steady-state flow control and transient flow control.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. Therefore,it is intended that the present invention includes all such alterations,additions, permutations, and equivalents as fall within the true spiritand scope of the invention.

1. A central cluster tool platform for semiconductor processing,comprising: a plurality of wafer processing modules accessible from acentral location; a plurality of gas supply control systems, where eachof the plurality of wafer processing modules is associated with arespective one of the plurality of gas supply control systems; and a gasflow rate verification device disposed in a central location relative tothe plurality of wafer processing modules, the gas flow rateverification device defined to be selectively connected in fluidcommunication with each of the plurality of gas supply control systems,wherein the gas flow rate verification device is defined to measure agas flow rate supplied by the gas supply control system to which the gasflow rate verification device is selectively connected.
 2. The centralcluster tool platform for semiconductor processing as recited in claim1, further comprising: a computer system defined to manage dataacquisition from the gas flow rate verification device and control thegas flow rate verification device, the computer system further definedto render a graphical user interface for monitoring and controlling thegas flow rate verification device.
 3. The central cluster tool platformfor semiconductor processing as recited in claim 1, wherein the gas flowrate verification device is defined to correct for a leak rate whenmeasuring the gas flow rate.
 4. The central cluster tool platform forsemiconductor processing as recited in claim 1, wherein the gas flowrate verification device is defined to measure gas flow rates within arange extending from about 0.5 standard cubic centimeter per minute toabout 5000 standard cubic centimeters per minute.
 5. The central clustertool platform for semiconductor processing as recited in claim 1,wherein the gas flow rate verification device is defined to include, afirst volume defined within a first chamber, a second volume definedwithin a second chamber, the second volume being larger than the firstvolume, a first bridge line defined to connect the first volume to thesecond volume, the first bridge line including a first valve and asecond valve, a first pressure measurement device disposed between thefirst valve and the second value, a second bridge line defined toconnect the first volume to the second volume, the second bridge lineincluding a third valve and a fourth valve, and a second pressuremeasurement device disposed between the third valve and the fourthvalue, the second pressure measurement device capable of measuringhigher pressures than the first pressure measurement device, whereineither the first volume, the second volume, or both the first and secondvolumes is selectable as a test volume for measuring a gas flow rate,wherein either the first pressure measurement device or the secondpressure measurement device is selectable for measuring a pressurewithin the test volume.
 6. The central cluster tool platform forsemiconductor processing as recited in claim 5, wherein the secondvolume is at least ten times larger than the first volume.
 7. Thecentral cluster tool platform for semiconductor processing as recited inclaim 5, wherein the second pressure measurement device is capable ofmeasuring pressures at least one hundred times larger than the firstpressure measurement device.